Abstract
Close-spaced evaporation (CSE) is a film deposition process that enables epitaxial growth and is scalable to large areas. Mechanical activation of the source by ball milling can extend the growth window in CSE of BaSi2 down to 700 °C. However, the close arrangement of the powder source (BaAl4–Ni) and the substrate might contaminate the films. This study investigated the structural and electrical properties of the BaSi2 films grown by CSE. It is found that the CSE BaSi2 films are not significantly contaminated by powder particles and Ni. In addition, semiconducting properties with low carrier density and high mobility are revealed by Hall effect measurement.
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