Abstract
Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.
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