Abstract
Dielectric layer containing CoSi 2 nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp 2 and NH 3 plasma mixed with SiH 4 without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi 2 nanocrystal. The gate stack composed of dielectric layer containing CoSi 2 nanocrystals with ALD HfO 2 capping layer together with Ru metal gate was analyzed by capacitance–voltage ( C– V) measurement. Large hysteresis of C– V curves indicated charge trap effects of CoSi 2 nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.
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