Abstract
A localized synthesis and self-assembly process for ZnO nanowires has been demonstrated using "on-chip local vapor transport." These single-crystal ZnO nanowires of 50-60 nm in average diameter are grown by the solid-source inductive heating method in a room temperature chamber. Nanowires are connected between two suspended MEMS microstructures which are fabricated by a silicon-on-insulator process. These two-terminal ZnO nanowires have good contact to silicon microstructures and are readily for applications, such as gas sensing, light detection and mechanical actuation. Results of UV sensing experiments show the conductance of these wide-bandgap ZnO nanowires increases about 12 times under illumination at 365 nm wavelength.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
