Abstract
In this work, transparent amorphous InGaZnO (a-IGZO) thin films have been deposited on quartz glass substrates using RF magnetron sputtering at room temperature at the O2 flow rate from 0 to 4 sccm. Electrical transport properties and optical transmittance of the a-IGZO films strongly depend on O2/Ar flow rate ratio. Electrical conductivity of the a- IGZO films dramatically decreases from semiconducting to semi-insulating with increasing the O2 flow rate above 1 sccm. Optical transmittance of the a-IGZO films, however, has been improved up to 85% by increasing O2 flow rate. Amorphous IGZO-based thin film transistors have been developed on indium-tin-oxide glass substrates with the phosphorus doped nanogranular SiO2 film of ~800 nm deposited by plasma-enhanced chemical vapor deposition at room temperature as the gate dielectric layer. The accumulation of protons at the IGZO/SiO2 interface induces a large electricdouble- layer capacitance. Enhancement-mode IGZO/SiO2/ITO TFT devices with field effect mobility of 10.5 cm2/Vs and low threshold voltage of 0.7 V have been achieved. Furthermore, a-IGZO TFT devices exhibit subthreshold swing of 70 mV/dec and Ion/off of 1.5x106. Optical transmission spectra show that the a-IGZO thin film transistors arrays on glass substrates is highly transparent with optical transmittance above 80%.
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