Abstract
Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO2/Al2O3 stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al2O3 and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9cm2/Vs, threshold voltage of 2.2V, subthreshold swing of 0.2V/decade, and on/off current ratio of 1×107. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing.
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