Abstract
GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.