Abstract
Self-heating effects in silicon-on-insulator (SOI) bipolar junction transistors (BJT) have been investigated by measurements and electrothermal simulations. The low heat conductivity of the buried silicon dioxide in the SOI material is shown to increase the thermal resistance, leading to thermal runaway effects. The thermal resistance can be decreased and the critical power density for thermal runaway can be increased, by replacing the buried silicon dioxide with another insulator that conducts heat better, e.g., diamond. The thermal resistance at steady-state is shown to decrease with a factor of more than three when using diamond, and considerably more during transient heating.
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