Abstract
Intersubband transitions in modulation doped, arbitrary potential profile quantum-well structures under an applied field are analyzed by solving the Schrödinger and Poisson equations self-consistently. This analysis is applied to the local-to-global transitions of a step well structure. The results show that although the band-bending effect is significant (∼25 meV) at a relatively high carrier density of 5.6×1011 /cm2 (∼3×1017 /cm3 ), the transition energies and absorption coefficients remain close to the flat band cases. This calculation confirms that the local-to-global transitions have large linear Stark shift and oscillator strength even at high doping.
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