Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy

Abstract

Abstract Self-assembled InGaN quantum dots (QDs) have been grown using metalorganic vapor-phase epitaxy (MOVPE), without using anti-surfactant. Using 120 s annealing, InGaN QDs have been successfully formed with a circular base diameter of 40 nm and an average height of 4 nm, with QDs density of 4×10 9 cm −2 . The InGaN QDs have peak photoluminescence (PL) wavelengths of 519 and 509 nm for samples without and with a GaN upper barrier, respectively. The full-width half-maximum (FWHM) of the PL spectra ranges from 56.6 up to 69.6 nm. These results demonstrates that high In-content InGaN QDs can be grown by MOVPE, and can potentially be utilized as the active media for light-emitting diodes (LEDs) and semiconductor laser diodes for green emission.