Abstract
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system. A recipe using only BCI3-based plasma with a resulting selectivity 13.5 for p-GaN in respect to InAlN was demonstrated. Surface roughness measurements depending on the etching time was performed by atomic force microscope (AFM) measurement and showed that a smooth etched surface with the root-mean-square roughness of 0.45 nm for p-GaN and 0.37 nm for InAlN were achieved. Normally-off p-GaN/InAlN HEMT devices were fabricated and tested by using the BCI3-based plasma we developed.
Highlights
Introduction anIn this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressure by using inductively coupled plasma reactive ion etching (ICP RIE) system
Surface roughness measurements depending on the etching time was performed by atomic force microscope (AFM) measurement and showed that a smooth etched surface with the root-mean-square roughness of 0.45 nm for p-GaN
Sample surfaces were performed in atomic force microscope (AFM) after the surfaces etching with the BCI3-based plasma-etching recipe with the maximum selectivity (Selectivity = etch rate of p-GaN/etch rate of InAlN)
Summary
An alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressure by using inductively coupled plasma reactive ion etching (ICP RIE) system. A recipe using only BCI3-based plasma with a resulting selectivity 13.5 for p-GaN in respect to InAlN was demonstrated. Normally-off p-GaN/InAlN HEMT device was fabricated and tested by using the BCI3-based plasma we developed. InAlN/GaN HEMTs are normally depletion mode (Dmode) or “normally on” devices due to the nature of polarization charges. P-GaN/InAlN/GaN heterostructure system are used in HEMTs technology for enhancementmode (E-mode) or “normally-off” operation. E-mode devices are mostly preferred for safety in power electronics and simple RF and Microwave circuits architecture in power switch applications [4,5,6,7].
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