Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing

Abstract

Low-temperature post oxidation annealing of 4H-SiC at 900 °C for 90 min after photoelectric chemical (PEC) etching in alkaline solution can eliminate the porous structures that form during the etching process, reduce the porosity, and optimize the surface morphology, which has minimal effect on unetched surfaces, allowing for selective treatment between etched and unetched surfaces. Additionally, it can improve the etching depth and enable effective repetition of the etching process. These benefits make PEC etching a valuable technique for microstructure fabrication and surface treatment.