Abstract
The use of a high density plasma to etch oxide side wall spacers was investigated. Process trends and the optimum process conditions required were determined. Oxide and polysilicon etch rates, uniformities, and the selectivity of oxide to polysilicon were all measured. The resulting etch chemistry had an oxide etch rate of 350 nm/min with a selectivity of oxide to polysilicon of 30:1.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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