Abstract
Enhanced nucleation density of diamond deposition on ion‐implanted Si(100) substrate without diamond abrasive pretreatment has been achieved for the first time. The optimum experimental parameters used to achieve good selectivity of diamond on implanted Si(100) were 100 keV P+ ion with a dose range between 1014 cm−2 and 1015 cm−2. Selectivity of diamond deposition also depended on thickness of the film, which was used as a mask to prevent the Si(100) surface from ion‐implantation induced damages. The effects of ion species, ion energy, ion dosage, and annealing temperature on the selective deposition of diamond films also have been discussed.
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