Abstract

Results of laser micromachining of silicon and gallium arsenide in submillimeter scale were compared. Studies were performed using a laser beam with IR and UV wavelengths and pulses of femto- and nano-second duration. Investigation of effectiveness of micromachining with different parameters of laser beams was presented. Quality of surface and edges was estimated by means of an optical microscope and an electron microscope. Studies of surface profiles were performed using a confocal microscope. Results of micromachining were with good accordance with computer modeling.

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