Abstract
Two noncontact laser-based heterodyne techniques, photo- thermal heterodyne (PTH) and photoluminescence heterodyne (PLH), are introduced and applied to processing and quality control in silicon wafer manufacturing. The crystallographic characteristics of process- induced defects in silicon wafers are suitable for the application of PTH and PLH techniques, which are demonstrated on selected examples from different steps of silicon wafer production. Both PLH and PTH tech- niques meet the demand for nondestructive and on-line-suitable mea- surement in the semiconductor industry. © 1997 Society of Photo-Optical Instru- mentation Engineers. Subject terms: photoacoustic and photothermal science and engineering; photo- luminescence heterodyne; photothermal heterodyne; silicon wafer manufacturing; ultra-large-scale integration; subsurface damage.
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