Abstract
Total secondary electron emission yields, γ, were measured at the bombardment of Li+, Na+ and K+ ions with energies ranging from 15 to 65 keV on clean (001) surfaces on SnTe and PbSe crystals under UHV conditions. The yields are explained in terms of a kinetic electron emission model. From the orientation dependence of γ, the ratio of the stopping power for channelling to that for random ions is deduced for a few low-index channels. Anomalous dependence of γ on the thickness of PbSe layer during in situ expitaxial growth on SnTe(001) is found, and this is explained as the result of dechannelling of ions at misfit dislocations on the PbSeSnTe interface.
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