Abstract
We demonstrate that complete depth profile of structural defects induced by ion implantation, with spatially separated lattice strain and implant ion contributions can be obtained with the use of second-harmonic generation (SHG) effect. The SHG effect was measured in transmission geometry for (111)-oriented garnet films implanted with H2+ ions of 60 keV energy and 1.5 × 1016 cm−2 dose, and etched to different depths along implantation range. Extremely strong sensitivity of the measured SHG intensity patterns in implanted samples on angle of incidence was found. The integral d¯ and differential d¯′ depth profiles of nonlinear optical susceptibility tensor were obtained from the experiment with the use of a phenomenological model developed for crystals of C3v symmetry. Direct correlation between perpendicular strain-related part of d¯′ profile and the induced effective magnetic anisotropy field is shown. Prominent peak in d¯′ located much deeper than the strain profile range was found, and its origin as related to the effect induced by hydrogen presence in the garnet crystal structure was interpreted.
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