Abstract
In this work, we report on the sensing properties of screen-printed In2 O3 (Indium Oxide) while adding a moderate quantity of SnO2 . It was found that the addition of SnO2 improves the response and decreases the operating temperature of the sensitive element for NO2 detection. However, a non-controlled amount of SnO2 leads to opposite result; for this reason in the present investigation we test films with different composition in order to optimize the quantity of SnO2 to be added. The crystallinity, roughness and morphology of the obtained In2 O3 -SnO2 anocomposite were analyzed using X-ray Diffraction (XRD), Transmission Electronic Microscopy (TEM) and Atomic Force Microscopy (AFM). The atomic composition of the In2 O3 -SnO2 films was determined with the energy dispersive spectroscopy (EDX) analysis during TEM observations. The effect of the composition on the cristallinity and morphological properties of the films was analyzed. Finally, the In2 O3 -SnO2 films were tested like sensitive elements for NO2 detection, wherein the effect of the composition was correlated with the sensor response in NO2 ambient. It was found that the addition of a moderate quantity of SnO2 to In2 O3 exhibited high sensitivity at rather lower operating temperatures.
Highlights
IntroductionWe report on the sensing properties of screen-printed In2O3 (Indium Oxide) while adding a moderate quantity of SnO2 (Tin Oxide)
The In2O3-SnO2 films were tested like sensitive elements for NO2 detection, wherein the effect of the composition was correlated with the sensor response in NO2 ambient
It is worth noting that only peaks corresponding to In2O3 appear in the X-ray Diffraction (XRD) patterns; these peaks are less intense but finer as compared to that corresponding to In2O3 [3, 4, 5] indicating a possible increase of the grain size
Summary
We report on the sensing properties of screen-printed In2O3 (Indium Oxide) while adding a moderate quantity of SnO2 (Tin Oxide). Screen printed In2O3-SnO2 nanocomposites were prepared with different proportion of Indium and Tin. We studied the structural and the morphological properties of these semiconductors and their use as sensitive layers in our gas sensor devices. The obtained mixture was aged for 72 hours, and 40 ml of absolute ethanol was slowly dripped into the former solution while stirring at a temperature of 80 °C during 2 hours. The obtained SnO2 was mixed in different proportion with an In2O3-based one [2] and deposited by the screen printing method on a glass substrate. Three types of layers have been prepared: In2O3-SnO2 (10 wt% Sn, 20 wt% Sn and 35 wt% Sn) nanocomposites. The layer to be tested is placed in a gas chamber that offers several possibilities of test and measurement
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