Abstract
Yb-doped Bi4Ge3O12 (BGO) single crystals with different dopant concentrations were synthesized by the floating zone method, and the photoluminescence (PL) and scintillation properties in visible to near-infrared (NIR) wavelength ranges were evaluated. In PL and scintillation, a broad emission band was observed at 400–600 nm, which was ascribed to the electronic transitions of Bi3+. Furthermore, NIR emission bands due to Yb3+ were observed at 1000 nm. To evaluate scintillation detector properties, the relationship between emission intensity in the NIR range and X-ray exposure dose rate was investigated. Among the present samples, 0.5 and 1% Yb-doped BGO showed good linearity in the dynamic range from 0.006 to 60 Gy h−1.
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