Abstract
n-doped germanium can be used as an active material for the realization of an optical source under electrical pumping. We propose to use Schottky contacts for germanium electroluminescent devices, and we show that carrier injection and electroluminescence in these Schottky devices can be optimized by depositing a thin Al2O3 interfacial layer on top of n-doped germanium. In the latter case, hole injection is optimized due to the drastic decrease of interface trap densities and room-temperature electroluminescence can be observed at small current injection with a higher differential efficiency as compared to the standard Schottky sample.
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