Abstract
ZnO-rod samples are grown homoepitaxially by successive chemical solution deposition on a ZnO-coated stainless steel foil substrate. Samples are composed from closely packed ZnO rods aligned along their c-axes perpendicular to the substrate. The structure, morphology, composition and the photoluminescence properties of samples are presented. Gold and silver Schottky diodes are prepared on the untreated and H2O2-treated (0 0 2) facets of the rods, and their parameters are determined from their current–voltage and capacitance–voltage characteristics. Au diodes with a low rectification factor (200 at ±2 V) but a large barrier height (0.78–0.98 eV) and Ag diodes with a high rectification factor (106 at ±2 V) and a large barrier height (0.98–1.10 eV) are achieved. The density of uncompensated donors in ZnO rods is measured to be in the range 1014–1017 cm−3.
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