Abstract
Many different growth structures of nickel silicide on the Si(001) are present as functions of coverage and temperature. Conflicting results in macroscopic Schottky barrier height measurements are due to the fact that one of many phases may dominate carrier transport through the interface barrier. Scanning capacitance microscopy and spectroscopy were performed on NiSi2/Si(100) to measure the spatial variation of Schottky barrier height. From the intercept in an 1/C2 vs V plot, a local Schottky barrier height can be deduced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
