Abstract
We fabricated a Schottky barrier diode (SBD) on ion-implanted diamond substrates. The SBDs contained lightly doped regions under the Schottky electrodes and heavily doped regions beneath the Ohmic contacts. The current remained below 6.4 × 10−11 A at reverse biases of up to 10 V, but increased sharply at a forward bias of −3.5 V. The Schottky barrier height and ideality factor under forward bias were estimated to be 1.1 eV and 10, respectively. The hole concentrations obtained by measuring the capacitance at various supplied voltages were in good agreement with the values obtained from the Hall effect measurements.
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