Abstract
The scavenging effect of magnesium oxide (MgO) addition on electrical property of 9 mol-% MgO partially stabilised zirconia (Mg-PSZ) was investigated in terms of phase transformation and intergranular phase formation. The addition of MgO up to 5 mol-% caused a stabilisation of Mg-PSZ, which led to an increase in the cubic phase and a decrease in the monoclinic and tetragonal phases in Mg-PSZ. The Mg-PSZ with the addition of 5 mol-% of MgO also exhibited the maximum ionic conductivity (0.3915 S cm−1 at 1500°C) and forsterite (Mg2SiO4) was observed on the grain boundaries of Mg-PSZ. The intergranular phases, formed by reactions between the silicon in Mg-PSZ and MgO addition, reduced the grain boundary resistance, because the siliceous phase which is a hindrance for oxygen ion conduction was scavenged by the formation of Mg2SiO4.
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