Abstract
A scanning tunneling microscope was used to study the GaAs (110) surface at small tip-sample distances of about 2–3 Å. Atomically resolved images in this new mode referred to as near contact imaging mode revealed corrugation maxima both on the As and on the Ga surface sites at one sample voltage. These dual atom images differ significantly from the simultaneously measured conventional filled-state images at larger tunneling gap widths of 4–9 Å which show the As sublattice only. We interpret the dual atom images in terms of local tip induced modifications of the electronic surface states. These modifications are dragged along the surface with the scanning movement of the tip.
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