Abstract
Annular dark‐field (ADF) imaging in a scanning transmission electron microscope (STEM) has been used to measure concentration profiles across thin Ga(As,Bi) layers grown by molecular beam epitaxy, from which the segregation lengths for bismuth surface segregation have been calculated. Performing this for layers grown at two different temperatures, the activation energies for Bi surface segregation have been determined for the lower (GaAsBi‐on‐GaAs) and for the upper (GaAs‐on‐GaAsBi) interface. The inequivalence observed is attributed to strain driving the larger Bi atoms preferably towards the free surface during growth.
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