Abstract
We apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that - against the intuition - SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10–10} side facets. Further, we were able to acquire current-voltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode.
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