Abstract
Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.
Highlights
Today’s lithography methods are based on particles, thermo-mechanical molding of polymers, and tip-based interactions
In the case of bulk samples, the relatively large inelastic mean free path (IMFP) of high-energy electrons causes the energy to deposit in the bulk rather than in the resist layer [12]
We propose that the effects described by Lyuksyutov et al [81] in terms of electrostatic nanolithography are attributed to the oxidative degradation process into volatile compounds we observed
Summary
Today’s lithography methods are based on particles (e.g. atoms, electrons, ions, and photons), thermo-mechanical molding (imprint) of polymers, and tip-based interactions. In the case of bulk samples, the relatively large inelastic mean free path (IMFP) of high-energy electrons causes the energy to deposit in the bulk rather than in the resist layer [12] This energy mismatch significantly decreases the exposure efficiency and increases the likelihood of radiation damage and substrate heating [11, 16]. The spatial resolution is defined by the primary beam and the induced SEs [25] This reduces backscattering, suppresses radiation damage and heating effects, and improves exposure efficiency and sensitivity of the resist [14, 18, 21, 25]. Since secondary electrons dominate the reactions for exposure of resist or precursor molecules, their relatively long mean free path can contribute to image blur and loss of resolution in the final pattern. (ii) The exposure dose in FE-SPL is controlled by the emission current and the tip velocity in the. case of vector-based line patterning or by the dwell time in the case of single pixel/dot patterning
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