Abstract
Scanning force/tunneling microscopy (AFM/STM) was proposed as a novel technique to investigate local dielectric breakdown voltage for the silicon oxide layer. It was manifested that this novel technique could simultaneously measure surface topography and distribution of dielectric breakdown voltage with nanometer-scale resolution. We confirmed that the dielectric breakdown voltage measured with the AFM/STM increased monotonously with the increase in oxide thickness. In addition to the above results, we observed that the oxide layer with visible defect had a lower dielectric breakdown voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
