Abstract
This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.
Highlights
As a result of high-power density, high breakdown voltage, and high-frequency characteristics, the gallium nitride high electron mobility transistor (GaN-HEMT) has been widely utilized for RF power amplifiers for various applications including base stations for wireless communication systems, satellite communication systems, and radars
The model of the 10-finger GaN-HEMT was extended according to the large-signal model of the two-finger GaN-HEMT, which was accurately modeled with the measured data
Extra pads and interconnection circuits were modeled using the equivalent circuit, which was based on EM simulation
Summary
As a result of high-power density, high breakdown voltage, and high-frequency characteristics, the gallium nitride high electron mobility transistor (GaN-HEMT) has been widely utilized for RF power amplifiers for various applications including base stations for wireless communication systems, satellite communication systems, and radars. In the case of transistors with a high output power capacity, it is very difficult to obtain an accurate large-signal model directly. This is a result of increased measurement error in both the DC I-V characteristics owing to the increased thermal effect and the small-signal characteristics due to very low input and output impedances. A large-signal modeling technique for a high-power GaN-HEMT is proposed using a large-signal model of a relatively smaller device and an electro-magnetic (EM) simulation for the interconnection circuit. A two-finger GaN-HEMT is selected and modeled using the measured I-V and small-signal characteristics. The large-signal model of the 10-finger device is verified by comparing the results from the harmonic balance simulation and the load-pull measurement
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