Abstract
A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq−1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm−2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.
Highlights
Transparent conducting films (TCFs) have been widely used in optoelectronics fields including flat panel displays (FPD)[1], organic light-emitting diodes (OLEDs)[2], thin film solar cells[3], and photodetectors[4]
With the development of ultraviolet (UV) optoelectronic devices such as UV photodetectors[9], UV electrically pumped laser and UV LEDs10, there are an enhanced need for the UV TCFs
By doping β-Ga2O3 (Eg = 4.9 eV) with Sn, Masahiro Orita et al.[11,12] obtained a transmittance of 50% at deep UV 248 nm with a conductivity of 1 S cm−1 and electron concentration of 1.43 × 1019 cm−3, these parameters are significantly lower compared to the TCFs in the visible region
Summary
Transparent conducting films (TCFs) have been widely used in optoelectronics fields including flat panel displays (FPD)[1], organic light-emitting diodes (OLEDs)[2], thin film solar cells[3], and photodetectors[4]. According to previous studies[13], a dielectric-metal-dielectric (DMD) structure can be optimized through tuning the thickness of dielectric and metal layers to achieve high transparency in the visible region as well as high conductivity[3,14].
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