Abstract
We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts
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