Abstract
Based on the experimental comparison of a GaN photoconductive semiconductor switch (PCSS) and two GaAs PCSSs, it is proposed that PCSSs made on heavily compensated substrates without the obvious optical frequency-doubling effect possess the laser-energy saturation threshold when triggered with a sub-bandgap laser. To this sort of PCSS, an algorithm is proposed for predicting the laser-energy saturability curves and the relevant saturation thresholds varying with the wavelength of a sub-bandgap laser. The algorithm is verified using the GaN:Fe PCSS experiment data.
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