Abstract
We investigated dependences of sapphire substrate off-angle from 0.2° to 3.0° and off-direction (a-axis or m-axis) on the device characteristics of the AlGaN quantum-well deep ultraviolet LEDs emitting 280–290 nm. We found that the terrace regions of the LEDs showed a lower threading dislocation density, while the step-edge regions of the LEDs contain more threading dislocations, more Ga, and thicker well widths. The emissions from the terrace regions of the LED with the off-angle were dominant at higher current injection. Finally, the light output power from the LED with the m-axis 1.0° off was the highest among the samples. We then developed a model to explain the above optical properties of our deep ultraviolet LEDs with off-angles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
