Abstract
Deposited instead of thermally grown oxides were studied to form high-quality interpolysilicon dielectric layers for embedded non-volatile memory application. It was found that by optimizing the texture and morphology of the polysilicon layers and by optimizing the post-dielectric deposition-anneal, very high-quality dielectric layers can be obtained. In this paper it is shown that for deposited interpolysilicon oxides rapid thermal annealing leads to improved electrical characteristics, like high charge to breakdown ( Q bd≈20 C/cm 2), lower leakage currents and decreased charge trapping during stress, depending on the RTP anneal ambient. Three annealing ambients are compared: N 2, O 2 and N 2O. Annealing in N 2O ambient is shown to be superior to the other annealings.
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