Abstract
We demonstrated the operation of GaInAs/AlAs resonant tunneling diode (RTD) oscillators with high output power (100–200 µW) at frequencies of 430–460 GHz using an offset-fed slot antenna, in which the RTD was placed 45 µm from the center of a 100-µm-long antenna. The highest output power obtained in this study was 200 µW at 443 GHz for a single RTD with a peak current density of 18 mA/µm2. The output powers of 50–130 µW at frequencies of 460–490 GHz were also obtained in the oscillators with different structure. Higher output is expected by optimizing the position and mesa area of the RTD and the antenna length.
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