Abstract
ABSTRACTThe measurement of the sheet resistance of Arsenic implanted layers is almost exclusively used for the monitoring of temperature nonuniformity of RTP equipment. However, as is shown in this contribution this technique relies on several averaging processes and a satisfactory uniformity of sheet resistance achieved on the implant monitor does not mean that the same performance will be achieved on the wafer with different optical properties. The sheet resistance uniformity is not the only the function of the processing temperature but also the function of the processing parameters such as annealing time, rate of heating and cooling, intensity of radiation and its spectral variation as well as function of the optical properties ofthe processed material. Impact of the substrate on the achieved results and processing dependence are discussed.
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