Abstract
We have investigated the grain-boundary and surface damage effects on the stabilization of n-Si photoelectrode using the rotating ring-disc electrode technique. The effect of surface damage is to lower the stabilization efficiency. We conclude that the defective surfaces lead to changes in the overall competition between the oxidation of the stabilizing agent and the oxidation of the electrode surface atoms. In addition, we have shown that the stabilization efficiency of polycrystalline n-Si is comparable to that of the surface-damage-free single crystal n-Si if its electronically active grain boundaries are not exposed to the electrolyte.
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