Abstract
The characteristic features of the dislocation microstructure that develops around indentations performed at room temperature on (001) GaAs single crystals are analysed by High Voltage Transmission Electron Microscopy. It is shown that perfect rosette dislocations (with Burgers vector parallel to the surface) are nucleated deeply in the crystal and never merge at the sample surface. Perpendicular rosette arms have similar lengths, which raises the question of the α/β asymmetry. Twins are present in one rosette arm only; twinning dislocations are nucleated on — or very close to — the indented surface. These results are discussed in connection with previously reported results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
