Abstract
We have investigated the structure and stability of SiNx films deposited with very high rates (>50 nm/s) in atmospheric-pressure (AP) He-based plasma excited by a 150 MHz very high-frequency (VHF) power using a cylindrical rotary electrode at room temperature. The SiNx films are prepared on Si(001) substrates with varying VHF power density (PVHF), H2 concentration and source ratio (NH3/SiH4). Infrared absorption spectroscopy is used to analyze the bonding configurations in the films. The results show that increasing H2 concentration under the supply of a moderately large PVHF, together with the adjustment of NH3/SiH4 ratio, enables us to prepare SiNx showing reasonable stability against a buffered hydrofluoric acid solution in spite of the very high deposition rate of 130 nm/s. The achievement of such a high-rate deposition at room temperature is primarily due to the significant enhancement of both gas-phase and surface-phase reactions in AP-VHF plasma.
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