Abstract
We report on the fabrication and spin-dependent transport properties of epitaxial Fe3O4∕MgO∕Co75Fe25 magnetic tunnel junctions (MTJs) grown on sapphire (00.1) substrates. The MTJs showed magnetoresistance (MR) ratios ranging from −14% to 10% at room temperature and a somewhat scattered resistance-area product (RA) ranging from 7×107to3×1010Ωμm2. The relationship between MR ratio and RA revealed a tendency for the MR ratio to go from positive to negative as RA increases. Because MTJs with fewer imperfections should show a higher RA, the negative MR ratio is considered to be intrinsic, and the electron transport via imperfections results in a reversal in the sign of the MR ratio.
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