Abstract
Surface-Confined Nitridation Reaction In article number 2200733, Jing Liu and co-workers report a fundamental strategy for directly printing GaN semiconductor film with finest thickness of 1nm on the surface of liquid gallium at room temperature. The new chemical reaction was defined and experimentally demonstrated as N 2 + 2 Ga → plasma 2 GaN ${{\rm{N}}_2} + 2{\rm{Ga}}\xrightarrow{{{\rm{plasma}}}}2{\rm{GaN}}$ . Such 2D GaN film with large area, uniformity and controllable thickness can be deposited on various substrates. This opens the way for facilely printing GaN based electronic devices in the coming time.
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