Abstract
Abstract Using sine wave modulated laser excitation, the optical phase shift of the luminescence of vapor grown Zn doped GaAs1−xPx layers was measured. From such measurements the minority carrier lifetime can be derived. This lifetime was measured as a function of doping level for crystals with a composition sufficiently remote from the cross-over composition (0.30 1019 cm-3) may be depressed by self-absorption of the luminescence. In addition, a few samples with a higher phosphorus content, up to x = 0.45, were measured. Their lifetimes being mainly determined by indirect transitions are also in the low nanosecond range. This stands in contrast with the longer lifetimes (up to 150 ns at p
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