Abstract
We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.
Highlights
We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature
These issues arising from nature of organic materials are absent in inorganic LEDs (ILEDs) such as GaN LEDs, but they require single-crystalline substrates and high-temperature processes.[4]
Inorganic thin film phosphors targeted at ILEDs must satisfy the additional requirements such as a low temperature process (e.g., < 400oC, and preferably at room temperature) and controlled carrier conduction
Summary
We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. The development of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) demonstrated that AOSs have low defect densities even fabricated at room temperature.[11,12,13] If we choose an active ion that has the relevant emission level well higher than those of the defects, we can expect high-efficiency light-emission by suppressing non-radiative recombination.
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