Abstract
Highly-insulating silicon oxide which contained hydrocarbon (CH n ) groups (SiOCH) was deposited at room temperature by plasma-enhanced chemical vapor deposition using tetraethoxysilane. The carbon-rich SiOCH film deposited at 50W, 27 °C showed the high resistivity of 6 × 10 15Ω cm at 0.5MV/cm. The insulating properties strongly depended on the deposition temperature and radio frequency (RF) power. The SiOCH films deposited at 300W, 53 °C showed the low carbon content and low resistivity due to the incorporation of hydroxyl (OH) groups generating electron traps. The room-temperature deposition at low RF power enabled the high-CH n addition, resulting in the suppression of OH incorporation into the films. The highly-insulating properties of the room-temperature deposited SiOCH originated from the suppression of OH incorporation.
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