Abstract
Room temperature bonding of polymethylglutarimide (PMGI) was performed for a layer transfer process. The surface activated bonding (SAB) method was applied for bonding PMGI to a Si support wafer with a thin Si deposited layer at room temperature. Using SAB, a bonded area covering over 92% of the wafer surface with a room-temperature bond strength of ∼2 J/m2 was achieved. The surface profile viewed using an atomic force microscope revealed that the PMGI surface was sufficiently smooth for bonding at room temperature. Micro-observation of the bond interface revealed that the deposited Si atoms did not diffuse into the PMGI. This process can thus be applied for three-dimensional integration and material integration.
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