Abstract
The effects of hot-carrier-induced oxide electron trapped charge ( Delta N/sub et/) and generated interface state ( Delta D/sub it/) on the gate-induced drain leakage (GIDL) current in n-channel MOSFETs with thin gate oxides ( approximately 86 AA) have been studied and established. The dependence of GIDL degradation characteristics on hot-carrier stress conditions and stress time, and the damage recovery behavior of GIDL have been extensively characterized. It is found that Delta N/sub et/ rather than Delta D/sub it/ is the primary factor responsible for GIDL degradation at high V/sub d/ regions. However, Delta D/sub it/ significantly enhances GIDL at low V/sub d/ regions ( >
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