Abstract
The influence of the quantum well (QW) interfaces with the barrier layers on the rapid degradation of AlGaAs based high power laser bars (808 nm) is investigated. Thermal stresses induced in the device by the local heating produced by nonradiative recombination areas at the facet mirror are calculated by means of a thermomechanical model. Results show that the laser power density threshold necessary to achieve the plastic deformation, leading to the generation of dislocations and to the failure of these devices, is reduced as the quality of the QW interfaces worsens in terms of thermal boundary resistance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
