Abstract
Environmental sensitivity of layered materials necessitates investigating the impact of surrounding materials like hexagonal boron nitride (hBN) on their electrical properties. We investigate the effects of hBN on gate-induced hysteresis in multilayer WSe2 field-effect transistors (FETs) with four configurations: bare WSe2, WSe2 on bottom hBN (b-hBN), WSe2 under top hBN (t-hBN), and WSe2 encapsulated with hBN. The presence of b-hBN greatly improves the electrical properties of the two corresponding WSe2 FETs, leading to a more than tenfold increase in channel currents and a significant reduction in hysteresis. In contrast, the effect of t-hBN is weaker than that of b-hBN. When the environment changes from vacuum to atmospheric conditions, the hysteresis of the two WSe2 FETs without b-hBN increases substantially, while the change is small for those with b-hBN. Our observations support that pressure-dependent hysteresis originates from gas molecule adsorptions at the WSe2/SiO2 interface, not directly on the WSe2 surface.
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